cys tech electronics corp. s pec. no. : c465 n3 issued date : 20 09.03.03 revised date : 2 012.05.18 page no. : 1/ 8 BSS84N3 c y s t ek product s pecification 50v p-channel enhancement mode mosfet BSS84N3 bv dss -50v i d -130ma r dson @v gs =-5v, i d =-100ma 6 (typ) features ? low gate charge ? excellent thermal and electrical capabilities ? pb-free package equivalent circuit outline absolute maximum ratings (tj=25 c, unless otherwise noted) parameter symbol limits unit drain-source v o ltage v ds -50 v gate-source voltage v gs 20 v continuous drain current @ t a =25 c, v gs =-5v i d -130 ma pulsed drain current (note 1) i dm -520 ma maximum power dissipation @ t a =25 p d 225 mw thermal resistance, junction-to-ambient r th,ja 556 c/w maximum lead temperature for soldering purpose, 10 s t l 260 c operating junction and storage temperature tj, tstg -55~+150 c note : 1 . pulse width 10 s, duty cy cl e 2%. BSS84N3 sot-23 d g gate s g s source d drain http://
cys tech electronics corp. s pec. no. : c465 n3 issued date : 20 09.03.03 revised date : 2 012.05.18 page no. : 2/ 8 BSS84N3 c y s t ek product s pecification electrical characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -50 - - v v gs =0v, i d =-250 a v gs(th) -0.8 -1.4 -2 v v ds =v gs , i d =-1ma g fs 50 - - ms v ds =-25v, i d =-100ma i gss - - 10 a v gs = 20v, v ds =0 - - -0.1 v ds =-25v, v gs =0 - - -1 v ds =-50v, v gs =0 i dss - - -25 a v ds =-50v, v gs =0, tj=125 c *r ds(on) - 6 10 v gs =-5v, i d =-100ma dynamic ciss - 25 - coss - 7 - crss - 2 - pf v ds =-5v, v gs =0, f=1mhz *t d(on) - 2.5 - *t r - 2 - *t d(off) - 7.3 - *t f - 3 - ns v ds =-15v, i d =-100ma, v gs =-5v, r g =3.3 *qg - 1.2 - nc v ds =-40v, i d =-500ma, v gs =-5v source-drain diode *i s - - -130 *i sm - - -520 ma *v sd - -0.85 -1.2 v v gs =0v, i s =-130ma *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking BSS84N3 sot-23 (pb-free) 3000 pcs / tape & reel pd
cys tech electronics corp. s pec. no. : c465 n3 issued date : 20 09.03.03 revised date : 2 012.05.18 page no. : 3/ 8 BSS84N3 c y s t ek product s pecification typical characteristics ty p i cal o u t p u t c h a r act er is tic s 0 10 0 20 0 30 0 40 0 50 0 60 0 01 2 3 456 7 8 9 1 0 -v ds , d r a i n - s o u r ce v o l t ag e( v ) -i d , d r ai n c u r r en t ( m a ) -v gs =2.5v -v gs =3v -v gs =2v -v gs =3.5v -v gs =4v -v gs =4.5v -v gs =5v b r e kdo w n v ol t a ge vs a m bi e n t t e m pe r a t ur e 0.6 0. 8 1 1. 2 1. 4 - 75 - 50 - 25 0 25 50 75 1 00 125 150 1 75 t j , j u nc t i on t e m pe r a t ur e ( c ) -b v ds s , no rm a l i z e d d ra i n -s o u rc e b r e a kd ow n v ol t a ge i d =-250 a, v gs =0v s ta t ic d r a in - s o u r c e o n - s t a te r e s is ta n c e v s d r a i n c u r r e n t 4 5 6 7 8 9 10 11 12 0. 001 0. 0 1 0. 1 1 -i d , d r ai n c u r r en t ( a ) r d s ( on) , s ta tic d r a in - s o u r c e o n - s ta te r e si st a n c e ( ) -v gs =10v -v gs =5v -v gs =3v r e v e r s e d r ai n c u r r e n t v s s o u r ce- d r ain v o lt ag e 0.2 0. 4 0. 6 0. 8 1 1. 2 0 0 .1 0 . 2 0 .3 0 .4 0 .5 -i dr , r e ve r s e d r a i n c ur r e nt ( a ) -v sd , s our c e - d r a i n v ol t a g e ( v ) tj=25c tj=150c v gs =0v s t at i c d r a i n - s o u r c e o n - s t at e r e s i s t an ce v s g at e - s o u r ce vo l t a g e 0 2 4 6 8 10 12 14 16 18 20 024 68 1 0 d r ai n - s o u r ce o n - s t at e r es i s t a n ce v s j u n ct i o n t em p e ar t u r e 0.4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 - 60 - 20 20 60 1 00 140 180 tj , j u n c t i o n te mp e r a t u r e ( c ) r ds ( on ) , n o r m ali z e d s tat i c d r ai n - s o u r c e o n - s t at e r e s i s t an ce v gs =-5v, i d =-100ma v gs =-10v, i d =-100ma -v gs , g a t e - s o u r ce v o lt ag e( v ) r ds( on) , static drain-source on- state resistance() i d =-100ma i d =-30ma
cys tech electronics corp. s pec. no. : c465 n3 issued date : 20 09.03.03 revised date : 2 012.05.18 page no. : 4/ 8 BSS84N3 c y s t ek product s pecification typical characteristics(cont.) ca pa c i t a nc e v s d ra i n -t o-s o urc e v ol t a ge 1 10 100 0. 1 1 1 0 100 -v ds , d r a i n- s our c e v o l t a ge ( v ) c a p a c i t a n c e ---(pf ) c oss ciss crss threshold voltage vs junction tempearture 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 - 60 - 40 - 20 0 20 40 60 80 100 12 0 140 160 t j , j unc t i o n t e m pe r a t ur e ( c ) -v gs ( t h ) , n or m a l i z e d t h r e s hol d v ol t a ge i d =-250 a s i n gl e p ul s e p o w e r r a t i ng, j u nc t i on t o a m b i e nt (note on page 2) 0 4 8 12 16 20 0. 001 0. 01 0. 1 1 10 100 p u l s e wi dt h( s ) po w e r ( w ) t j( max) =150c t a =25c r ja =556c/w gate charge characteristics 0 2 4 6 8 10 0 0 . 6 1. 2 1. 8 2. 4 3 3 . 6 qg , t o ta l ga te c h a r g e ( n c ) -v gs , ga te - s o u r c e vo lta g e ( v ) v ds =-40v i d =-500ma maximum safe operating area 0. 001 0. 01 0. 1 1 0. 01 0 . 1 1 10 100 -v ds , d r ain - s o u r ce v o l t ag e( v ) -i d , d r a i n c u rr e n t (a ) dc 10ms 100m 1ms 100 s t a = 25 c , t j = 150 c , v gs =- 5 v , r ja = 5 56 c / w single pulse 1s m a xi m u m d r a i n c u rre nt v s j u nc t i ont e m pe ra t u re 0 0. 02 0. 04 0. 06 0. 08 0. 1 0. 12 0. 14 0. 16 25 50 75 100 1 25 150 1 75 t j , j u nc t i on t e m pe r a t u r e ( c ) -i d , m a xi m um d r a i n c u r r e nt ( a ) t a =25c, v gs =-5v
cys tech electronics corp. s pec. no. : c465 n3 issued date : 20 09.03.03 revised date : 2 012.05.18 page no. : 5/ 8 BSS84N3 c y s t ek product s pecification typical characteristics(cont.) t y p i c a l t ra n s fe r cha r a c t e ri s t i c s 0 100 200 300 400 500 600 0123456 -v gs , g a te- s o u r c e v o l t ag e( v ) -i d , d ra i n c u rre n t ( ma ) -v ds =10v power derating curve 0 0. 0 5 0. 1 0. 1 5 0. 2 0. 2 5 0 20 40 6 0 80 100 120 140 16 0 t a , a m b i en t t e m p er at u r e( ) p d , p o we r dis s i p a tio n ( w ) t r a ns i e nt t he r m a l r e s pons e c u r ve s 0.001 0. 01 0. 1 1 1 . e - 0 4 1 . e - 0 3 1. e - 0 2 1. e - 0 1 1. e + 00 1. e + 01 1. e + 0 2 1. e + 0 3 t 1 , s q u a r e w a v e p u ls e d u r a tio n ( s ) n o r m a l iz e d t r a n s ie n t t h e r m a l r e s is ta n c e single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1. r ja (t ) = r( t ) * r ja 2 . d u ty f a c to r , d = t 1 /t 2 3. t jm -t c =p dm *z jc (t ) 4.r ja =556 c/w
cys tech electronics corp. s pec. no. : c465 n3 issued date : 20 09.03.03 revised date : 2 012.05.18 page no. : 6/ 8 BSS84N3 c y s t ek product s pecification reel dimension carrier tape dimension
cys tech electronics corp. s pec. no. : c465 n3 issued date : 20 09.03.03 revised date : 2 012.05.18 page no. : 7/ 8 BSS84N3 c y s t ek product s pecification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cys tech electronics corp. s pec. no. : c465 n3 issued date : 20 09.03.03 revised date : 2 012.05.18 page no. : 8/ 8 BSS84N3 c y s t ek product s pecification sot-23 dimension *: typical inches h j k d a l g v c b 3 2 1 s style: pin 1.gate 2.source 3.drain marking: te 3-l ead sot - 23 plasti c surface mou n ted packa g e cys t ek pa ckage code: n3 pd millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0032 0.0079 0.08 0.20 b 0.0472 0.0669 1.20 1.70 k 0.0118 0.0266 0.30 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1161 2.10 2.95 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0000 0.0040 0.00 0.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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